公开(公告)号：US20240379343A1

公开(公告)日：2024-11-14

申请号：US18660774

申请日：2024-05-10

Applicant: Applied Materials, Inc.

Inventor： Yongqian Gao ,  Michael S. Jackson ,  David T. Or ,  Chun-Chieh Wang ,  Le Zhang

IPC: H01L21/02 ,  H01J37/32

Abstract: Embodiments of the disclosure relate to methods for reducing or eliminating the first wafer effect after chamber cleans for plasma etch processes. In some embodiments, the wafer support is maintained at an elevated temperature relative to the etch process. In some embodiments, the etch process is a NF3+NH3 plasma etch to remove native oxides from a silicon substrate.

公开(公告)号：US20240153790A1

公开(公告)日：2024-05-09

申请号：US18387649

申请日：2023-11-07

Applicant: Applied Materials, Inc.

Inventor： Borui Xia ,  Chih-Hsun Hsu ,  Xiaoxiong Yuan ,  Le Zhang ,  David T. Or ,  Jiang Lu

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01L21/31116

Abstract: Processing chambers including at least one gas reservoir connected to and in fluid communication with the lid through a fast-switching valve and a gas reservoir line are described. Processing methods, for example, etching methods, using the processing chambers are also described.

公开(公告)号：US20230136499A1

公开(公告)日：2023-05-04

申请号：US17844185

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Shumao Zhang ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Jesus Candelario Mendoza-Gutierrez ,  Le Zhang ,  David T. Or ,  Mark Saly ,  Jiang Lu

IPC: H01L21/02

Abstract: Methods for selectively depositing on self-assembled monolayer (SAM) are disclosed. Some embodiments of the disclosure utilize a precursor of a Formula (I), Formula (II), Formula (III), and Formula (IV): RnSi(NR′R″)(4-n) (III), RnSiX(4-n) (IV), wherein R1 and R2 are independently selected from substituted or unsubstituted C1-C20 alkyl, or R1 and R2 form a substituted or unsubstituted C1-C20 cycloalkyl ring, and wherein R3, R4, R5, R6, Rn are independently selected from hydrogen, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C1-C20 alkoxy, and substituted or unsubstituted C1-C20 vinyl, X is a halide selected from Cl, Br, and I, and n is an integer from 1 to 3, to form a self-assembled monolayer (SAM) on a damaged silicon nitride layer to prevent critical dimension blow out of a feature in a silicon nitride layer substrate.