公开(公告)号：US20040149699A1

公开(公告)日：2004-08-05

申请号：US10754280

申请日：2004-01-08

Applicant: Applied Materials, Inc.

Inventor： Daniel J. Hofman ,  Jennifer Y. Sun ,  Senh Thach ,  Yan Ye

IPC: B23K010/00

CPC classification number: H01J37/32082 ,  H01J37/32183

Abstract: A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity concentration within a range corresponding to a minimal change in RF power absorption in the protective layer at an RF source power frequency with changes in coating temperature and or thickness. The metal base may have a set of first arcuately slotted gas passages and a set of pressure-dropping orifices coinciding axially with the top ends of the gas passages. The protective coating a set of arcuately slotted gas passages in registration gas passages of the metal base. The pressure drop in the orifices and the electric field drop in the slotted gas passages are both sufficient to maintain the pressure and electric field within the gas passages within a range that prevents arcing.

Abstract translation: 用作等离子体反应器中的电容源功率施加器和气体分配喷头的气体分配顶板电极包括在电极内表面上的金属基底和与工艺相容的保护层，其中掺杂剂杂质浓度在对应于 RF源功率频率随着涂层温度和/或厚度的变化而在保护层中RF功率吸收的最小变化。 金属基底可以具有一组第一弧形开槽的气体通道和一组与气体通道的顶端轴向重合的压力下降孔。 保护涂层在金属基座的配准气体通道中形成一组弧形开槽的气体通道。 孔口中的压降和开槽气体通道中的电场下降足以将气体通道内的压力和电场保持在防止电弧的范围内。