公开(公告)号：US20240363310A1

公开(公告)日：2024-10-31

申请号：US18308877

申请日：2023-04-28

Applicant: Tokyo Electron Limited

Inventor： Qiang Wang ,  Michael Hummel ,  Peter Lowell George Ventzek ,  Shyam Sridhar ,  Mitsunori Ohata

IPC: H01J37/32 ,  H01Q5/10

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01Q5/10

Abstract: According to an embodiment, a plasma processing system includes a plasma chamber, an RF source, a matching circuit, a balun, and a resonating antenna. The resonating antenna includes a first and a second spiral resonant antenna (SRA), each having an electrical length corresponding to a quarter of a wavelength of a frequency of a forward RF wave generated by the RF source. The first end of the first SRA is coupled to a first balanced terminal of the balun and the second end of the first SRA is open circuit. The first end of the second SRA is coupled to a second balanced terminal of the balun and the second end of the second SRA is open circuit. The first and the second SRA are arranged in a symmetrically nested configuration having a same center point.

公开(公告)号：US12131885B2

公开(公告)日：2024-10-29

申请号：US17554469

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Arakawa

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32165

Abstract: Examples of a plasma treatment device include an RF generator, a matching box including an input terminal connected with the RF generator, a sensor configured to sense high-frequency electricity, an impedance adjustment circuit, and an output terminal, a matching controller connected with the sensor and configured to control the impedance adjustment circuit, a reactor chamber connected with the output terminal, and a harmonic filter circuit connected with a transmission line between the sensor and the reactor chamber.

公开(公告)号：US20240355586A1

公开(公告)日：2024-10-24

申请号：US18138730

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32568 ,  H01J2237/3343

Abstract: Apparatus and methods for controlling the uniformity of a plasma formed using a radio frequency (RF) source power assembly that includes one or more resonant tuning circuits coupled to two or more electrodes disposed within a multi-electrode source assembly. Improved plasma uniformity control and reduced system cost are achieved by eliminating multiple RF generators and matches that power the multiple electrodes separately. Multiple frequencies may also be provided to multiple electrodes at the same time, which can include another cost savings when using a multi-frequency RF source assembly. Local plasma density and sheath voltage over a surface of a substrate are controlled with segmented electrodes disposed within the processing region of a plasma processing chamber. The ion flux and direction, as well as energetic electron flux towards the substrate, are controlled to address the plasma non-uniformity and global tilt during processing of a semiconductor substrate.

公开(公告)号：US12125687B2

公开(公告)日：2024-10-22

申请号：US17709613

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdo Kim ,  Sungyong Lim ,  Daewon Kang ,  Sungyeol Kim ,  Sangki Nam ,  Myunggeun Song ,  Byungkook Cho ,  Hyeoncheol Jin ,  Jonghun Pi

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32183 ,  H01J37/32935 ,  H01J2237/24564 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

公开(公告)号：US12125676B2

公开(公告)日：2024-10-22

申请号：US18224749

申请日：2023-07-21

Applicant: Tokyo Electron Limited

Inventor： Takahiro Takeuchi ,  Ken Kobayashi

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32183

Abstract: A plasma processing apparatus includes: a chamber; first and second matching circuits; a first RF generator generating a first RF pulsed signal including a plurality of first pulse cycles in which each cycle includes first, second, and third periods, and the first RF pulsed signal has first, second, and third power levels in first, second, and third periods, respectively; a second RF generator generating a second RF pulsed signal including a plurality of second pulse cycles in which each cycle includes fourth and fifth periods, and the second RF pulsed signal has fourth and fifth power levels in fourth and fifth periods, respectively; and a third RF generator generating a third RF pulsed signal including a plurality of third pulse cycles in which each cycle includes sixth and seventh periods, and the third RF pulsed signal has sixth and seventh power levels in sixth and seventh periods, respectively.

公开(公告)号：US20240339298A1

公开(公告)日：2024-10-10

申请号：US18745667

申请日：2024-06-17

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Maolin Long

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32165

Abstract: Matching circuitry is disclosed for power generation in a plasma processing apparatus or other application. Matching circuitry is provided in a unitary physical enclosure and is configured to provide impedance matching at multiple different frequencies. For example, in a dual frequency implementation, first and second RF generators can provide electromagnetic energy at first and second respective frequencies in a continuous mode or a pulsed mode to matching circuitry that includes first and second circuit portions. The first circuit portion can include one or more first tuning elements configured to receive RF power at a first frequency and provide impedance matching for a first ICP load (e.g., a primary inductive element). The second circuit portion can include one or more second tuning elements configured to receive RF power at a second different frequency and provide impedance matching for a second ICP load (e.g., a secondary inductive element).

公开(公告)号：US12112972B2

公开(公告)日：2024-10-08

申请号：US17221215

申请日：2021-04-02

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Douglas Arthur Buchberger, Jr. ,  Gautam Pisharody ,  Dmitry Lubomirsky ,  Shekhar Athani

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/68785 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/463 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32724 ,  H01J37/32899 ,  H01L21/6833 ,  H01L21/68792 ,  C23C16/45565 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

公开(公告)号：US12106942B2

公开(公告)日：2024-10-01

申请号：US17212666

申请日：2021-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yi Rop Kim ,  Kui Hyun Yoon ,  Yun Hwan Kim ,  Moon Eon Lee ,  Seok Woo Lee ,  Dong Hee Han

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  C23C16/4586 ,  H01J37/32697 ,  H01J37/32724 ,  H01L21/68785 ,  C23C16/45565 ,  C23C16/466 ,  H01J37/32091 ,  H01J37/32183 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma process apparatus includes a chamber in which a plasma process is performed, an electrostatic chuck which supports a wafer inside the chamber and comprises a first portion and a second portion disposed on the first portion, a first electrode disposed inside the electrostatic chuck, a second electrode which is spaced apart from the first electrode inside the electrostatic chuck, surrounds the first electrode in a plane defined by the first direction and a second direction perpendicular to the first direction, and is disposed on the same plane as the first electrode, a power supply configured to apply a voltage to each of the first electrode and the second electrode, a plurality of cooling gas supply lines which penetrates the electrostatic chuck in a third direction perpendicular to the first and second directions and is configured to provide a cooling gas to the wafer.

公开(公告)号：US20240322781A1

公开(公告)日：2024-09-26

申请号：US18733691

申请日：2024-06-04

Applicant: Lam Research Corporation

Inventor： Karl Leeser ,  Sunil Kapoor ,  Bradford J. Lyndaker

IPC: H03H7/38 ,  H01J37/32

CPC classification number: H03H7/38 ,  H01J37/32183

Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.

公开(公告)号：US20240321552A1

公开(公告)日：2024-09-26

申请号：US18187558

申请日：2023-03-21

Applicant: Tokyo Electron Limited

Inventor： John Carroll ,  Jianping Zhao

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H03H7/38 ,  H01J2237/327

Abstract: A matching circuit for a plasma tool including an impedance matching network configured to be coupled between a power supply and a plasma chamber, the plasma chamber being configured to operate a plasma in a predetermined frequency range, the power supply being configured to provide power for the plasma chamber, the impedance matching network including a first pi-network and a second pi-network in series coupled between an input of the plasma chamber and an output of the power supply, and the impedance matching network being configured such that, during operation of the plasma chamber in the predetermined frequency range, an impedance of the impedance matching network and the plasma chamber equals an impedance of the power supply.