公开(公告)号：US20030111181A1

公开(公告)日：2003-06-19

申请号：US10028646

申请日：2001-12-19

Applicant: Applied Materials, Inc.

Inventor： Shiang-Bau Wang ,  Daniel J. Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  David McParland ,  Matthew L. Miller ,  Douglas A. Buchberger JR. ,  Steven C. Shannon

IPC: C23F001/00 ,  C23C016/00

CPC classification number: H01J37/321

Abstract: An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in which current flow is parallel, the facing portions being sufficiently close to at least nearly share a common current path, whereby to form transitions across the facing portions between opposing magnetic polarizations.