公开(公告)号：US20220285133A1

公开(公告)日：2022-09-08

申请号：US17189728

申请日：2021-03-02

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Jon Christian Farr ,  Ravikumar Patil ,  Eller Juco ,  Yi Zheng ,  Siqing Lu

IPC: H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a top delivery gas nozzle configured to direct process gas toward a substrate support surface of a substrate support and a side delivery gas nozzle configured to direct the process gas toward a side surface of the substrate support, a first gas line connected to the top delivery gas nozzle, a second gas line connected to the side delivery gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to the processing volume of the processing chamber, and a first orifice flow restrictor or a first needle valve connected to the first gas line or a second orifice flow restrictor or a second needle valve connected to the second gas line.