公开(公告)号：US20200303250A1

公开(公告)日：2020-09-24

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Feiyue MA ,  Kai WU ,  Yu LEI ,  Kazuya DAITO ,  Yi XU ,  Vikash BANTHIA ,  Mei CHANG ,  He REN ,  Raymond Hoiman HUNG ,  Yakuan YAO ,  Avgerinos V. GELATOS ,  David T. OR ,  Jing ZHOU ,  Guoqiang JIAN ,  Chi-Chou LIN ,  Yiming LAI ,  Jia YE ,  Jenn-Yue WANG

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US20180315650A1

公开(公告)日：2018-11-01

申请号：US15498024

申请日：2017-04-26

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Feiyue MA ,  Yu LEI ,  Kai WU ,  Mehul B. NAIK ,  Zhiyuan WU ,  Vikash BANTHIA ,  Hua AI

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76879 ,  H01L21/28562 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257

Abstract: Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench.

公开(公告)号：US20190157145A1

公开(公告)日：2019-05-23

申请号：US16252100

申请日：2019-01-18

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Feiyue MA ,  Yu LEI ,  Kai WU ,  Mehul B. NAIK ,  Zhiyuan WU ,  Vikash BANTHIA ,  Hua AI

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522

Abstract: Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.