公开(公告)号：US20200303250A1

公开(公告)日：2020-09-24

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Feiyue MA ,  Kai WU ,  Yu LEI ,  Kazuya DAITO ,  Yi XU ,  Vikash BANTHIA ,  Mei CHANG ,  He REN ,  Raymond Hoiman HUNG ,  Yakuan YAO ,  Avgerinos V. GELATOS ,  David T. OR ,  Jing ZHOU ,  Guoqiang JIAN ,  Chi-Chou LIN ,  Yiming LAI ,  Jia YE ,  Jenn-Yue WANG

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

公开(公告)号：US20160319428A1

公开(公告)日：2016-11-03

申请号：US14750322

申请日：2015-06-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Balasubramanian RAMACHANDRAN ,  Shih Chung CHEN ,  Kevin A. PAPKE ,  Lei ZHOU ,  Jing ZHOU

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/4404 ,  C23C16/45565

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300μ-in Ra, or an emissivity (ε) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，处理室包括：室主体和限定处理室内的处理容积的盖组件; 设置在所述处理体积内以支撑衬底的衬底支撑件; 以及具有第一表面的喷头，所述第一表面包括与所述基板支撑件相对并平行设置的多个气体分配孔，其中所述喷头由铝制成并且包括沿着所述第一表面的氧化铝涂层，其中所述氧化铝涂层的厚度为 约0.0001至约0.002英寸。 在一些实施例中，喷头还可以具有在Ra中约10至约300μ的粗糙度或约0.20至约0.80的发射率（ε）中的至少一种。 处理室可以是热原子层沉积（ALD）室。

公开(公告)号：US20150086722A1

公开(公告)日：2015-03-26

申请号：US14484423

申请日：2014-09-12

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Xinliang LU ,  Kyoung-Ho BU ,  Jing ZHOU ,  Seshadri GANGULI ,  David THOMPSON

IPC: B08B5/00

CPC classification number: H01J37/32862 ,  C23C16/08 ,  C23C16/4405 ,  H01J37/32522 ,  H01J37/32724

Abstract: Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support.

Abstract translation: 本文所述的实施方案涉及热氯气清洗工艺。 在一个实施例中，用于清洁处理室中的N金属膜沉积的方法包括将虚设基板定位在基板支撑件上。 将处理室加热至至少约50摄氏度。 该方法还包括将氯气流入处理室并从处理室排出氯气。 在另一个实施方案中，一种用于清洁处理室中的铝化铝膜沉积的方法包括将处理室加热到约70摄氏度至约100摄氏度之间的温度，其中处理室和衬底支撑体包括一个或多个流体通道 被配置为加热或冷却处理室和基板支撑件。