公开(公告)号：US20230012819A1

公开(公告)日：2023-01-19

申请号：US17811323

申请日：2022-07-08

Applicant: Applied Materials, Inc.

Inventor： John Byron Tolle ,  Tomohiko Kitajima ,  Thomas John Kirschenheiter ,  Patricia M. Liu ,  Zuoming Zhu ,  Joe Margetis ,  Fredrick David Fishburn ,  Abdul Wahab Mohammed ,  Gill Yong Lee

IPC: H01L27/108

Abstract: Three-dimensional dynamic random-access memory (3D DRAM) structures and methods of formation of same are provided herein. In some embodiments, a 3D DRAM stack can include alternating silicon (Si) layers and silicon germanium (SiGe) layers. Each of the Si layers may have a height greater than a height of each of the SiGe layers. Methods and systems for formation of such structures are further provided.

公开(公告)号：US12207458B2

公开(公告)日：2025-01-21

申请号：US17680993

申请日：2022-02-25

Applicant: Applied Materials, Inc.

Inventor： Fredrick David Fishburn

IPC: H10B12/00

Abstract: Methods for forming 3D DRAM leverage L-pad formations to increase memory density. Methods may include etching a substrate to form two Si walls oriented parallel to each other and forming a space therebetween, depositing a plurality of alternating Si layers and SiGe layers using epitaxial growth processes to form horizontal deposition layers on the space between the two Si walls and vertical deposition layers on sidewalls of the two Si walls, depositing a CMP stop layer on the substrate, planarizing the substrate to the CMP stop layer, removing a portion of a top of the two Si walls and forming an L-pad formation, deep etching a pattern of holes into the space between the two Si walls in horizontal portions of the plurality of alternating Si layers and SiGe layers, and forming vertical wordline structures from the pattern of holes in the horizontal portions.