公开(公告)号：US12261037B2

公开(公告)日：2025-03-25

申请号：US16434507

申请日：2019-06-07

Applicant: Applied Materials, Inc.

Inventor： Golnaz Karbasian ,  Keith T. Wong

IPC: H01L21/02

Abstract: Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas. Thin films of hafnium oxide are also described.

公开(公告)号：US20190393029A1

公开(公告)日：2019-12-26

申请号：US16434507

申请日：2019-06-07

Applicant: Applied Materials, Inc.

Inventor： Golnaz Karbasian ,  Keith T. Wong

IPC: H01L21/02

Abstract: Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas. Thin films of hafnium oxide are also described.