公开(公告)号：US20210087677A1

公开(公告)日：2021-03-25

申请号：US17028156

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  HyoJin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455 ,  H01L27/108

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

公开(公告)号：US20240120195A1

公开(公告)日：2024-04-11

申请号：US17960979

申请日：2022-10-06

Applicant: Applied Materials, Inc. ,  Regents of the University of California

Inventor： Keith T. Wong ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Andrew C. Kummel ,  Yunil Cho ,  James Huang

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02123 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/67017

Abstract: A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.

公开(公告)号：US11626284B2

公开(公告)日：2023-04-11

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  C23C14/58 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  H01L29/24

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

公开(公告)号：US20240035152A1

公开(公告)日：2024-02-01

申请号：US18378425

申请日：2023-10-10

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hyojin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56 ,  H10B12/00

CPC classification number: C23C16/305 ,  C23C16/0227 ,  C23C16/45553 ,  C23C16/56 ,  H10B12/00

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

公开(公告)号：US11821079B2

公开(公告)日：2023-11-21

申请号：US17028156

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  HyoJin Kim

IPC: C23C16/30 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56 ,  H10B12/00

CPC classification number: C23C16/305 ,  C23C16/0227 ,  C23C16/45553 ,  C23C16/56 ,  H10B12/00

Abstract: Methods of depositing a molybdenum sulfide film with increased sulfur:molybdenum ratio are described. The methods include pre-cleaning a dielectric material with oxygen radicals prior to formation of a molybdenum sulfide film that has a lower oxygen content than would be formed without the pre-cleaning.

公开(公告)号：US20220139765A1

公开(公告)日：2022-05-05

申请号：US17515773

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Hurshvardhan Srivastava ,  Keith T. Wong

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/40

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

公开(公告)号：US20220108886A1

公开(公告)日：2022-04-07

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

公开(公告)号：US12261037B2

公开(公告)日：2025-03-25

申请号：US16434507

申请日：2019-06-07

Applicant: Applied Materials, Inc.

Inventor： Golnaz Karbasian ,  Keith T. Wong

IPC: H01L21/02

Abstract: Methods of depositing thin films of hafnium oxide possessing strong ferroelectric properties are described. A hafnium oxide monolayer is formed in a first process cycle comprising sequential exposure of a substrate to a hafnium precursor, purge gas, first oxidant and purge gas. A doped hafnium oxide monolayer is formed in a second process cycle comprising sequential exposure of the substrate to a hafnium precursor, purge gas, dopant precursor, purge gas, second oxidant and purge gas. Thin films of hafnium oxide are also described.

公开(公告)号：US12211736B2

公开(公告)日：2025-01-28

申请号：US17515773

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Hurshvardhan Srivastava ,  Keith T. Wong

IPC: H01L21/762 ,  C23C16/40 ,  H01L21/02 ,  H01J37/32

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

公开(公告)号：US20240301552A1

公开(公告)日：2024-09-12

申请号：US18119432

申请日：2023-03-09

Applicant: APPLIED MATERIALS, INC. ,  The Regents of the University of California

Inventor： Harshil Kashyap ,  Andrew C. Kummel ,  Ajay Kumar Yadav ,  Keith T. Wong ,  Srinivas Nemani ,  Ellie Yieh

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/24 ,  C23C16/40 ,  C23C16/45546 ,  C23C16/45553

Abstract: Described herein is a method for performing an atomic layer deposition process to form a silicon doped oxide film on a surface of the substrate. The oxide film may be a hafnium-zirconium oxide film, or a zirconium oxide film. The atomic layer deposition process may include forming the oxide layers and a silicon layer using a hydrogen peroxide as at least one of the precursors used in formation of the oxide layers.