公开(公告)号：US20220108893A1

公开(公告)日：2022-04-07

申请号：US17064700

申请日：2020-10-07

Applicant: Applied Materials, Inc.

Inventor： Hans-Joachim L. Gossmann ,  Stanislav S. Todorov ,  Hiroyuki Ito

IPC: H01L21/265 ,  H01L27/146

Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than −50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.

公开(公告)号：US11830739B2

公开(公告)日：2023-11-28

申请号：US17064700

申请日：2020-10-07

Applicant: Applied Materials, Inc.

Inventor： Hans-Joachim L. Gossmann ,  Stanislav S. Todorov ,  Hiroyuki Ito

IPC: H01L21/265 ,  H01L27/146

CPC classification number: H01L21/26593 ,  H01L27/14601 ,  H01L27/14643

Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than −50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.