公开(公告)号：US12247283B2

公开(公告)日：2025-03-11

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: H01L29/06 ,  C23C14/48 ,  C23C14/54 ,  H01J37/304 ,  H01J37/317

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US20230016122A1

公开(公告)日：2023-01-19

申请号：US17560529

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Alexander K. Eidukonis ,  Hans-Joachim L. Gossmann ,  Dennis Rodier ,  Stanislav S. Todorov ,  Richard White ,  Wei Zhao ,  Wei Zou ,  Supakit Charnvanichborikarn

IPC: C23C14/54 ,  H01J37/304 ,  C23C14/48 ,  H01J37/317 ,  H01L29/06

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

公开(公告)号：US10658156B1

公开(公告)日：2020-05-19

申请号：US16265002

申请日：2019-02-01

Applicant: APPLIED Materials, Inc.

Inventor： Stanislav S. Todorov ,  Jeffrey Morse ,  John Sawyer

IPC: H01J37/317 ,  H01J37/302 ,  G02B26/10

Abstract: A system and method for generating a plurality of scan profiles based on a desired implant pattern and the uniformity of the spot beam is disclosed. The system scans the spot beam and records the number of ions as a function of position. This is referred to as the linear uniformity array. The desired implant pattern and the linear uniformity array are then combined to generate a composite pattern array. This array contemplates the non-uniformity of the scanned beam and allows the system to create scan profiles that compensate for this. The software may be executed on the controller disposed in the implantation system, or may be executed on a different computing device.

公开(公告)号：US20230287561A1

公开(公告)日：2023-09-14

申请号：US17694028

申请日：2022-03-14

Applicant: Applied Materials, Inc.

Inventor： Stanislav S. Todorov ,  Robert J. Mitchell ,  Joseph C. Olson ,  Frank Sinclair

IPC: C23C14/48 ,  C23C14/50

CPC classification number: C23C14/48 ,  C23C14/505

Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The spinning disk rotates about a central axis. The spinning disk is also translated linearly in a directional perpendicular to the central axis. The spot ion beam strikes the spinning disk at a distance from the central axis, referred to as the radius of impact. The rotation rate and the scan velocity may both vary inversely with the radius of impact.

公开(公告)号：US20220108893A1

公开(公告)日：2022-04-07

申请号：US17064700

申请日：2020-10-07

Applicant: Applied Materials, Inc.

Inventor： Hans-Joachim L. Gossmann ,  Stanislav S. Todorov ,  Hiroyuki Ito

IPC: H01L21/265 ,  H01L27/146

Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than −50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.

公开(公告)号：US11830739B2

公开(公告)日：2023-11-28

申请号：US17064700

申请日：2020-10-07

Applicant: Applied Materials, Inc.

Inventor： Hans-Joachim L. Gossmann ,  Stanislav S. Todorov ,  Hiroyuki Ito

IPC: H01L21/265 ,  H01L27/146

CPC classification number: H01L21/26593 ,  H01L27/14601 ,  H01L27/14643

Abstract: Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than −50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.