公开(公告)号：US11069853B2

公开(公告)日：2021-07-20

申请号：US16195313

申请日：2018-11-19

Applicant: Applied Materials, Inc.

Inventor： Hsin-Wei Tseng ,  Chando Park ,  Jaesoo Ahn ,  Lin Xue ,  Mahendra Pakala

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for hybrid (or called integrated) spin-orbit-torque magnetic spin-transfer-torque magnetic random access memory (SOT-STT MRAM) applications. In one embodiment, the method includes one or more magnetic tunnel junction structures disposed on a substrate, the magnetic tunnel junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a spin orbit torque (SOT) layer disposed on the magnetic tunnel junction structure, and a back end structure disposed on the spin orbit torque (SOT) layer.