公开(公告)号：US11450525B2

公开(公告)日：2022-09-20

申请号：US16131931

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Hung Nguyen ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/04 ,  C23C16/20

Abstract: Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.

公开(公告)号：US20200090924A1

公开(公告)日：2020-03-19

申请号：US16131931

申请日：2018-09-14

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Hung Nguyen ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/04

Abstract: Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.