公开(公告)号：US20240018647A1

公开(公告)日：2024-01-18

申请号：US18209257

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Nicolas Louis BREIL ,  Yi-Chiau HUANG ,  Jesus AVILA AVENDANO

IPC: C23C16/02 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/0245 ,  H01L21/76897 ,  H01L21/76879 ,  H01L23/53266 ,  H01L21/76849

Abstract: A method of forming an oxidation barrier layer in a semiconductor structure includes forming a contact layer on an exposed surface of a semiconductor region of a semiconductor structure in a first processing chamber, wherein the semiconductor region comprises silicon germanium doped with p-type dopants and the contact layer comprises silicon germanium (SiGe) with a ratio of germanium (Ge) ranging between 60% and 100%, and forming an oxidation barrier layer comprising gallium (Ga) on the contact layer, by applying gallium (Ga)-containing liquid precursor to a surface of the contact layer in the first processing chamber.