公开(公告)号：US20240266319A1

公开(公告)日：2024-08-08

申请号：US18105801

申请日：2023-02-03

Applicant: Applied Materials, Inc.

Inventor： Guan Huei SEE ,  Jinho AN ,  Arvind SUNDARRAJAN

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/768

CPC classification number: H01L24/80 ,  H01L21/561 ,  H01L21/76898 ,  H01L24/97 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/97

Abstract: Embodiments of methods of die stacking are provided herein. In some embodiments, a method of die stacking with die-to-wafer bonding includes: bonding a plurality of first dies to a substrate via a hybrid bonding process; performing a selective silicon (Si) thinning process to reduce a thickness of the plurality of first dies that are bonded to form a plurality of thinned first dies; passivating the plurality of thinned first dies to form a plurality of passivated thinned first dies to protect the plurality of thinned first dies; filling gaps between adjacent dies of the plurality of thinned first dies with a first fill material, wherein the plurality of passivated thinned first dies and the first fill material together form a first layer; and forming a plurality of first conductive vias through the first layer to the substrate.