公开(公告)号：US20250075321A1

公开(公告)日：2025-03-06

申请号：US18652608

申请日：2024-05-01

Applicant: Applied Materials, Inc.

Inventor： Fredrick FISHBURN ,  Hao ZHANG ,  Zhijun CHEN ,  Johanes SWENBERG ,  Christopher S. OLSEN ,  Hansel LO ,  Kristopher Mikael KOSKELA ,  Hoi-Sung CHUNG ,  Chang Seok KANG ,  Raghuveer Satya MAKALA

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/34 ,  C23C16/56

Abstract: A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.