公开(公告)号：US20150368796A1

公开(公告)日：2015-12-24

申请号：US14744296

申请日：2015-06-19

Applicant: Applied Materials, Inc.

Inventor： Xuebin LI ,  Kevin JOSEPH BAUTISTA ,  Avinash SHERVEGAR ,  Yihwan KIM ,  Nyi O. MYO ,  Abhishek DUBE

IPC: C23C16/455 ,  F16L41/02

CPC classification number: C23C16/45504 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/4551 ,  C23C16/45563 ,  C30B25/14 ,  C30B35/00

Abstract: Embodiments described herein generally relate to apparatus for forming silicon epitaxial layers on semiconductor devices. Deposition gases and etching gases may be provided sequentially or simultaneously to improve epitaxial layer deposition characteristics. A gas distribution assembly may be coupled to a deposition gas source and an etching gas source. Deposition gas and etching gas may remain separated until the gases are provided to a processing volume in a processing chamber. Outlets of the gas distribution assembly may be configured to provide the deposition gas and etching gas into the processing volume with varying characteristics. In one embodiment, outlets of the gas distribution assembly which deliver etching gas to the processing volume may be angled upward relative to a surface of a substrate.

Abstract translation: 本文描述的实施例一般涉及用于在半导体器件上形成硅外延层的装置。 可以顺序地或同时地提供沉积气体和蚀刻气体以改善外延层沉积特性。 气体分配组件可以耦合到沉积气体源和蚀刻气体源。 沉积气体和蚀刻气体可以保持分离，直到气体被提供到处理室中的处理体积。 气体分配组件的出口可以被配置成将沉积气体和蚀刻气体提供到具有不同特征的处理体积中。 在一个实施例中，将蚀刻气体输送到处理容积的气体分配组件的出口可以相对于衬底的表面向上倾斜。