公开(公告)号：US20230017383A1

公开(公告)日：2023-01-19

申请号：US17375654

申请日：2021-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Joung Joo LEE ,  Komal GARDE ,  Kishor Kumar KALATHIPARAMBIL ,  Xianmin TANG ,  Xiangjin XIE ,  Rui LI

IPC: H01L21/768 ,  H01L21/285 ,  C23C14/34

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.