公开(公告)号：US20200350159A1

公开(公告)日：2020-11-05

申请号：US16752630

申请日：2020-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Rui LI ,  Xiangjin XIE ,  Fuhong Zhang ,  Shirish PETHE ,  Adolph ALLEN ,  Lanlan Zhong ,  Xianmin TANG

IPC: H01L21/02 ,  H01L21/768 ,  C23C14/34 ,  C23C18/38

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

公开(公告)号：US20230122969A1

公开(公告)日：2023-04-20

申请号：US18067415

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US20220084882A1

公开(公告)日：2022-03-17

申请号：US17022058

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Fuhong ZHANG ,  Gang SHEN ,  Feng CHEN ,  Rui LI ,  Xiangjin XIE ,  Tae Hong HA ,  Xianmin TANG

IPC: H01L21/768 ,  C23C16/455 ,  G11B5/31

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

公开(公告)号：US20210118729A1

公开(公告)日：2021-04-22

申请号：US17036038

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US20230017383A1

公开(公告)日：2023-01-19

申请号：US17375654

申请日：2021-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Joung Joo LEE ,  Komal GARDE ,  Kishor Kumar KALATHIPARAMBIL ,  Xianmin TANG ,  Xiangjin XIE ,  Rui LI

IPC: H01L21/768 ,  H01L21/285 ,  C23C14/34

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.

公开(公告)号：US20230333309A1

公开(公告)日：2023-10-19

申请号：US18132812

申请日：2023-04-10

Applicant: Applied Materials, Inc.

Inventor： Rui LI ,  Takashi KURATOMI ,  Alexia Adilene PORTILLO RIVERA

IPC: C23C14/34 ,  F21V8/00 ,  C23C14/22 ,  C23C14/08 ,  C23C14/10

CPC classification number: G02B6/0065 ,  C23C14/083 ,  C23C14/10 ,  C23C14/228 ,  C23C14/34 ,  G02B6/0016 ,  G02B5/1857

Abstract: Embodiments of the present disclosure generally relate to optical devices having barrier layers for reduced hardmask diffusion and/or hardmask residue, and related methods of forming the optical devices. In one or more embodiments, a plurality of optical device structures each include a barrier layer disposed between a device function layer and a hardmask layer prior to removal of the hardmask layer.

公开(公告)号：US20230230806A1

公开(公告)日：2023-07-20

申请号：US17568836

申请日：2022-01-05

Applicant: Applied Materials, Inc.

Inventor： Yida LIN ,  Rui LI ,  Martin Lee RIKER ,  Haitao WANG ,  Noufal Kappachali ,  Xiangjin XIE

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  B23K15/0006 ,  H01J2237/327

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a processing chamber and a second input configured to receive an RF delivered power from a matching network connected between the RF power source and the processing chamber. The RF power delivery compensation circuit calculates an RF forward power compensation factor based on the RF forward power and the RF delivered power for adjusting the RF forward power delivered to the processing chamber during operation.

公开(公告)号：US20220364230A1

公开(公告)日：2022-11-17

申请号：US17733331

申请日：2022-04-29

Applicant: Applied Materials, Inc.

Inventor： Rui LI ,  Xiangjin XIE ,  Xianmin TANG ,  Anthony Chih-Tung CHAN

IPC: C23C16/455 ,  H01J37/32

Abstract: Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the layer to a plasma. The exposed layer can be deposited by an atomic layer deposition process, and can be, for example, a tantalum nitride layer. The bias power can be up to 500 watts of RF power at a pulse frequency of about 1 Hz to about 10 kHz. The bias power can be pulsed uniformly or at multiple different levels.