公开(公告)号：US20250028242A1

公开(公告)日：2025-01-23

申请号：US18908553

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： TZU SHUN YANG ,  ZHENXING HAN ,  MADHUR SACHAN ,  LEQUN LIU ,  NASRIN KAZEM ,  LAKMAL CHARIDU KALUTARAGE ,  MARK JOSEPH SALY

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027

Abstract: Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.