公开(公告)号：US20240387458A1

公开(公告)日：2024-11-21

申请号：US18199183

申请日：2023-05-18

Applicant: Applied Materials, Inc.

Inventor： Suketu PARIKH ,  Andrew YEOH ,  Arvind SUNDARRAJAN ,  Nirmalya MAITY ,  Balasubramanian PRANATHARTHIHARAN ,  Martinus Maria BERKENS

IPC: H01L25/065 ,  H01L21/768 ,  H01L21/78 ,  H01L23/00 ,  H01L23/367 ,  H01L23/522 ,  H01L25/00

Abstract: In some embodiments, a method for forming a multiple die stack comprises forming a first circuit wafer with multiple first circuit dies and a first circuit support layer on a bottom of the first circuit wafer where each first circuit die has a power and circuit layer underlying a power and signal layer, forming an interposer wafer with multiple interposer dies and an interposer support layer on a top of the interposer wafer where each interposer die has a power and signal layer underlying a power via and signal via layer, and hybrid bonding a top surface of the first circuit wafer to a bottom surface of the interposer wafer to form a first bonded wafer with electrical power and signal connections between the multiple first circuit dies and the multiple interposer dies where the interposer wafer provides structural support of the first bonded wafer during subsequent processing.