公开(公告)号：US20040023508A1

公开(公告)日：2004-02-05

申请号：US10210929

申请日：2002-08-02

Applicant: Applied Materials, Inc.

Inventor： Jeffrey D. Chinn ,  Michael Rattner ,  Nicholas Pornsin-Sirirak ,  Yanping Li

IPC: H01L021/302

CPC classification number: H01L21/30655

Abstract: We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 nullm in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 nullm, typically less than about 500 nm, and even more typically between about 100 nm and 20 nm. Features having a sidewall taper angle, relative to an underlying substrate, typically ranges from about 85null to about 92null and exhibiting the smooth sidewalls are produced by the method. In one embodiment, a stabilizing etchant species is used constantly during the plasma etch process, while at least one other etchant species and at least one polymer depositing species are applied intermittently, typically periodically, relative to each other. In another embodiment, the stabilizing etchant species is used constantly and a mixture of the other etchant species and polymer depositing species is used intermittently.

Abstract translation: 我们已经开发出一种不复杂的方法，其以产生平滑侧壁，粗糙度小于约1μm的方式，在含硅衬底中等深度蚀刻深凹陷特征，例如至少5μm深的深沟槽， 通常小于约500nm，甚至更典型地在约100nm和20nm之间。 具有相对于下面的基底的侧壁锥角的特征通常在约85°至约92°的范围内，并且通过该方法产生了平滑的侧壁。 在一个实施例中，在等离子体蚀刻过程期间不断地使用稳定蚀刻剂物质，而至少一种其它蚀刻剂物质和至少一种聚合物沉积物质相对于彼此间歇地，典型地周期性地施加。 在另一个实施方案中，稳定化蚀刻剂物质被不断使用，并且间歇地使用其它蚀刻剂物质和聚合物沉积物质的混合物。