公开(公告)号：US20190355579A1

公开(公告)日：2019-11-21

申请号：US16035983

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Michel Ranjit FREI ,  Mahendra PAKALA ,  Mehul B. NAIK ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.