公开(公告)号：US20240128121A1

公开(公告)日：2024-04-18

申请号：US18392534

申请日：2023-12-21

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Nikolaos BEKIARIS ,  Srinivas D. NEMANI

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01J37/32009 ,  H01L21/02271 ,  H01J2237/3321

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US20220230887A1

公开(公告)日：2022-07-21

申请号：US17150280

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Meiyee SHEK ,  Maximillian CLEMONS ,  Srinivas D. NEMANI ,  Nikolaos BEKIARIS ,  Ellie YIEH

IPC: H01L21/311

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes heating a substrate disposed in an interior volume of a process chamber and having a boron-containing film deposited thereon to a predetermined temperature; and supplying water vapor in a non-plasma state to the interior volume at a predetermined pressure for a predetermined time, while maintaining the substrate at the predetermined temperature to anneal the substrate for the predetermined time and remove the boron-containing film.

公开(公告)号：US20190368035A1

公开(公告)日：2019-12-05

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Qiwei LIANG ,  Adib KHAN ,  Maximillian CLEMONS

IPC: C23C16/44

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US20210257252A1

公开(公告)日：2021-08-19

申请号：US16792646

申请日：2020-02-17

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Nikolaos BEKIARIS ,  Srinivas D. NEMANI

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US20190311908A1

公开(公告)日：2019-10-10

申请号：US16366539

申请日：2019-03-27

Applicant: Applied Materials, Inc.

Inventor： He REN ,  Maximillian CLEMONS ,  Mei-Yee SHEK ,  Minrui YU ,  Bencherki MEBARKI ,  Mehul B. NAIK ,  Chentsau YING ,  Srinivas D. NEMANI

IPC: H01L21/285 ,  H01L29/45

Abstract: Methods for forming low resistivity metal silicide interconnects using one or a combination of a physical vapor deposition (PVD) process and an anneal process are described herein. In one embodiment, a method of forming a plurality of wire interconnects includes flowing a sputtering gas into a processing volume of a processing chamber, applying a power to a target disposed in the processing volume, forming a plasma in a region proximate to the sputtering surface of the target, and depositing the metal and silicon layer on the surface of the substrate. Herein, the first target comprises a metal silicon alloy and a sputtering surface thereof is angled with respect to a surface of the substrate at between about 10° and about 50°.

公开(公告)号：US20190355579A1

公开(公告)日：2019-11-21

申请号：US16035983

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Maximillian CLEMONS ,  Michel Ranjit FREI ,  Mahendra PAKALA ,  Mehul B. NAIK ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.