公开(公告)号：US20220238680A1

公开(公告)日：2022-07-28

申请号：US17528863

申请日：2021-11-17

Applicant: Applied Materials, Inc.

Inventor： Steven C. H. HUNG ,  Benjamin COLOMBEAU ,  Myungsun KIM ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L29/06

Abstract: A method of forming a gate stack structure includes forming a dipole metal layer on a high-κ gate dielectric layer on a semiconductor structure formed on a substrate, annealing the dipole metal layer, and removing the dipole metal layer. The dipole metal layer comprises dopants in the high-κ gate dielectric layer.