公开(公告)号：US20230245925A1

公开(公告)日：2023-08-03

申请号：US18126048

申请日：2023-03-24

Applicant: Applied Materials, Inc.

Inventor： Wenyi LIU ,  Wei TANG ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Yong WU ,  Jianqiu GUO ,  Arkaprava DAN ,  Mandyam SRIRAM

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/28568

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US20220037154A1

公开(公告)日：2022-02-03

申请号：US17501970

申请日：2021-10-14

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Pramit MANNA ,  Abhijit B. MALLICK ,  Srinivas GANDIKOTA

IPC: H01L21/033 ,  H01J37/317 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/311

Abstract: Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.

公开(公告)号：US20200051994A1

公开(公告)日：2020-02-13

申请号：US16150652

申请日：2018-10-03

Applicant: Applied Materials, Inc.

Inventor： Vinod Robert PURAYATH ,  Priyadarshi PANDA ,  Abhijit MALLICK ,  Srinivas GANDIKOTA

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556

Abstract: A method of forming a memory device including a plurality of nonvolatile memory cells is provided. The method includes forming a hole in a stack of alternating insulator layers and memory cell layers. The stack extends from a bottom to a top, and the stack includes a plurality of insulator layers and plurality of memory cell layers. The method further includes depositing a first portion of a silicon channel layer. The first portion of the silicon channel layer extends from the bottom of the stack to the top of the stack. The method further includes adding a dopant layer over the first portion of the silicon channel layer. The dopant layer includes a first dopant. The method further includes depositing a second portion of the silicon channel layer. The second portion of the silicon channel layer extends from the bottom of the stack to the top of the stack.

公开(公告)号：US20190080915A1

公开(公告)日：2019-03-14

申请号：US16120800

申请日：2018-09-04

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha ROY ,  Yingli RAO ,  Srinivas GANDIKOTA

IPC: H01L21/285 ,  H01L21/321 ,  C23C16/06 ,  C23C16/34

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US20170029941A1

公开(公告)日：2017-02-02

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Lara HAWRYLCHAK ,  Zhigang XIE ,  Muhammad M. RASHEED ,  Rongjun WANG ,  Xianmin TANG ,  Zhendong LIU ,  Tza-Jing GUNG ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Michael S. COX ,  Donny YOUNG ,  Kirankumar SAVANDAIAH ,  Zhenbin GE

IPC: C23C14/56 ,  H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20230402291A1

公开(公告)日：2023-12-14

申请号：US18198064

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： Steven C. H. HUNG ,  Yixiong YANG ,  Tianyi HUANG ,  Srinivas GANDIKOTA

IPC: H01L21/3115 ,  H01L21/02 ,  H01L21/8238

CPC classification number: H01L21/3115 ,  H01L21/02183 ,  H01L21/823857 ,  H01L21/02192 ,  H01L21/0228 ,  H01L21/02186

Abstract: A method of adjusting a threshold voltage in a field-effect-transistor (FET) device includes performing a deposition process to deposit a diffusion barrier layer over a gate dielectric layer in a first region, a second region, and a third region of a semiconductor structure, performing a first patterning process to remove a portion of the deposited diffusion layer in the first region, performing a second patterning process to partially remove a portion of the deposited diffusion barrier layer in the second region, performing a dipole layer deposition process to deposit a dipole layer over the gate dielectric layer in the first region, and the diffusion barrier layer in the second region and in the third region, and performing an annealing process to drive dipole dopants from the dipole layer into the gate dielectric layer.

公开(公告)号：US20210351071A1

公开(公告)日：2021-11-11

申请号：US16871400

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Wenyi LIU ,  Wei TANG ,  Srinivas GANDIKOTA ,  Yixiong YANG ,  Yong WU ,  Jianqiu GUO ,  Arkaprava DAN ,  Mandyam SRIRAM

IPC: H01L21/768 ,  H01L21/285

Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

公开(公告)号：US20210287900A1

公开(公告)日：2021-09-16

申请号：US16817378

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yixiong YANG ,  Wei LIU ,  Yuan-hui LO ,  Srinivas GANDIKOTA ,  Jacqueline Samantha WRENCH ,  Yongjing LIN ,  Wen Ting CHEN ,  ShihChung CHEN

IPC: H01L21/02

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.

公开(公告)号：US20210111020A1

公开(公告)日：2021-04-15

申请号：US16951858

申请日：2020-11-18

Applicant: Applied Materials, Inc.

Inventor： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline Samantha WRENCH ,  Yong YANG ,  Steven C. H. HUNG

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67

Abstract: A method of forming a high-K dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-K dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-K dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-K dielectric cap layer, and removing the sacrificial silicon cap layer.

公开(公告)号：US20190393042A1

公开(公告)日：2019-12-26

申请号：US16554834

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Susmit SINGHA ROY ,  Kelvin CHAN ,  Hien Minh LE ,  Sanjay KAMATH ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Karthik JANAKIRAMAN

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/40 ,  C23C16/505 ,  C23C28/00 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/06 ,  H01L21/768

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.