公开(公告)号：US20240002999A1

公开(公告)日：2024-01-04

申请号：US18368285

申请日：2023-09-14

Applicant: Applied Materials, Inc.

Inventor： Patrick TAE ,  Yaoling PAN ,  Leonard M. TEDESCHI

IPC: C23C14/52 ,  G01N27/22 ,  C23C16/52 ,  H01J37/32 ,  C23C14/54

CPC classification number: C23C14/52 ,  G01N27/22 ,  C23C16/52 ,  H01J37/32935 ,  C23C14/545

Abstract: Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.