公开(公告)号：US12125683B2

公开(公告)日：2024-10-22

申请号：US17324435

申请日：2021-05-19

申请人： Applied Materials, Inc.

发明人： Mingle Tong

IPC分类号： H01J37/32 ,  C23C14/54 ,  C23C16/52 ,  H01L21/02 ,  H01L21/033 ,  H01L21/66

CPC分类号： H01J37/32495 ,  C23C14/545 ,  C23C16/52 ,  H01J37/32715 ,  H01J37/32899 ,  H01L21/02274 ,  H01L21/0332 ,  H01L22/26 ,  H01J2237/3321 ,  H01J2237/3323

摘要： Exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. The semiconductor processing systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate. The substrates support may include a shaft coupled with the support plate. The semiconductor processing systems may include a liner positioned within the chamber body and positioned radially outward of a peripheral edge of the support plate. An inner surface of the liner may include an emissivity texture.

公开(公告)号：US20230304144A1

公开(公告)日：2023-09-28

申请号：US18023934

申请日：2021-10-19

申请人： Shincron Co., Ltd.

发明人： Makoto IGARASHI ,  Suguru SAITO ,  Yuya NONAKA

IPC分类号： C23C14/54 ,  C23C14/24

CPC分类号： C23C14/545 ,  C23C14/243

摘要： A film formation device having a high operation rate is provided. The film formation device includes: a film formation chamber (2) in which at least a film formation material (M) and a film formation target (S) are provided, wherein the film formation chamber (2) can be set to a predetermined film formation atmosphere; a hearth liner (23) provided inside the film formation chamber (2) to accommodate the film formation material (M); a heating source (24) provided inside the film formation chamber (2) to heat the film formation material (M) accommodated in the hearth liner (23); and a material supply chamber (3) having a material-filled unit (35) that is filled with the film formation material (M) to supply to the hearth liner (23). The material supply chamber (3) is connected to the film formation chamber (2) via a communication path (36) having a gate valve (37) and can be set to a predetermined pressure atmosphere. When the film formation material (M) is supplied, after the inside of the material supply chamber (3) is set to the predetermined pressure atmosphere in a state in which the film formation chamber (2) is set to the film formation atmosphere, the gate valve (37) is opened to supply the film formation material (M), which fills the material-filled unit (35), to the hearth liner (23) via the communication path (36).

公开(公告)号：US11728226B2

公开(公告)日：2023-08-15

申请号：US16994267

申请日：2020-08-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wen-Hao Cheng ,  Hsuan-Chih Chu ,  Yen-Yu Chen ,  Yi-Ming Dai

IPC分类号： H01L21/66 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01L22/26 ,  C23C14/351 ,  C23C14/545 ,  H01J37/32715 ,  H01J37/3455 ,  H01J37/3458

摘要： A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

公开(公告)号：US20190218657A1

公开(公告)日：2019-07-18

申请号：US16230095

申请日：2018-12-21

申请人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

发明人： Yabing QI ,  Luis Katsuya ONO ,  Shenghao WANG

IPC分类号： C23C14/24 ,  C23C14/54 ,  C23C14/06 ,  H01L51/00 ,  H01L51/44

CPC分类号： C23C14/24 ,  C23C14/06 ,  C23C14/545 ,  C23C14/548 ,  H01L51/001 ,  H01L51/0012 ,  H01L51/42 ,  H01L51/44 ,  Y02E10/549

摘要： A system and method for fabricating perovskite films for solar cell applications are provided, the system including a housing for use as a vacuum chamber, a substrate stage coupled to the top section of the housing; a first evaporator unit coupled to the bottom section of the housing and configured to generate BX2 (metal halide material) vapor; a second evaporator unit coupled to the housing and configured to generate AX (organic material) vapor; and a flow control unit coupled to the housing for controlling circulation of the AX vapor. The dimensions of the horizontal cross-sectional shape of the first evaporator unit, the dimensions of the horizontal cross-sectional shape of the substrate stage, and the relative position in the horizontal direction between the two horizontal cross-sectional shapes are configured to maximize the overlap between the two horizontal cross-sectional shapes.

公开(公告)号：US20170312773A1

公开(公告)日：2017-11-02

申请号：US15651425

申请日：2017-07-17

申请人： Samsung Display Co., Ltd.

发明人： Sung-Joong JOO ,  You-Min Cha ,  Seuk-Hwan Park

IPC分类号： B05B12/00 ,  C23C14/54 ,  C23C14/04

CPC分类号： B05B12/00 ,  C23C14/04 ,  C23C14/545

摘要： A deposition apparatus uniformly controlling deposited quantities of a plurality of depositing sources by efficiently determining an abnormal depositing source. The deposition apparatus may reduce loss of materials by exactly determining an abnormal depositing source. The deposition apparatus includes: a plurality of depositing sources spraying a deposition material; a substrate holder fixing a substrate to face the depositing source; a depositing source shutter disposed at one side of the depositing source and opening and closing an passage of each depositing source; and a main shutter disposed between the depositing source and the substrate fixed to the substrate holder and depositing a part of the deposition material on the substrate through the main shutter.

公开(公告)号：US09496527B2

公开(公告)日：2016-11-15

申请号：US14421418

申请日：2013-08-02

申请人： Kaneka Corporation

发明人： Shuhei Kako

IPC分类号： G01R31/26 ,  H01L51/56 ,  C23C14/24 ,  C23C14/54 ,  B05B12/08 ,  B05B17/00 ,  H01L51/00 ,  C23C14/12

CPC分类号： H01L51/56 ,  B05B12/084 ,  B05B17/00 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  C23C14/545 ,  H01L51/001

摘要： The present invention relates to a vacuum deposition device that includes a film forming chamber and a series of discharge circuit which evaporates the film forming materials and discharges the evaporated film forming materials toward a substrate. The discharge circuit is constituted of: evaporating parts, a manifold group; a film forming material discharge part; and a shutter member. In the film forming material discharge part, discharge openings which are communicated with manifold portions are distributed. Flow restrictions are provided in the vicinity of open ends of the discharge openings. Open areas of the flow restrictions differ from each other for the respective manifold portions. Consideration is taken such that the film forming materials which are formed into layers having similar film thicknesses are filled into the evaporating parts belonging to the same group.

摘要翻译： 本发明涉及一种真空沉积装置，其包括成膜室和一系列放电电路，其蒸发成膜材料并将蒸发的成膜材料排向基板。 放电电路由以下部分组成：蒸发部分，歧管组; 成膜材料排出部分; 和挡板部件。 在成膜材料排出部中，与歧管部连通的排出口分布。 在排放口的开放端附近设有流动限制。 流量限制的开放区域对于各个歧管部分彼此不同。 考虑到将形成为具有相似膜厚度的层的成膜材料填充到属于同一组的蒸发部件中。

公开(公告)号：US20160326631A1

公开(公告)日：2016-11-10

申请号：US14706032

申请日：2015-05-07

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Hans-Juergen Eickelmann ,  Thorsten Muehge ,  Erik Rueger ,  Markus Schmidt

IPC分类号： C23C14/34 ,  C23C14/14

CPC分类号： C23C14/3464 ,  C23C14/027 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/54 ,  C23C14/542 ,  C23C14/545 ,  C23C14/548 ,  H01J37/32935 ,  H01J37/3429 ,  H01J37/3473

摘要： Embodiments relate to a sputter chamber comprising both a target surface and an anode surface. The sputter chamber has both an ingress and an egress to allow passage of a gas. The sputter chamber further includes a target substrate. A secondary material flexibly changes the composition of the target substrate in-situ by changing coverage of the target by the secondary material. Gas entering the sputter chamber interacts with the changed composition of the target. The interaction discharges a plasma alloy and the alloy condenses on the anode surface in the sputter chamber. The condensed alloy produces an alloy film.

公开(公告)号：US20160230270A1

公开(公告)日：2016-08-11

申请号：US14390646

申请日：2013-12-30

申请人： Halliburton Energy Services, Inc.

发明人： David L. PERKINS ,  Robert Paul FREESE ,  Christopher Michael JONES ,  Richard Neal GARDNER

IPC分类号： C23C14/54 ,  G01N21/84 ,  G01N21/31 ,  G01N21/33 ,  E21B49/08 ,  C23C14/50 ,  G01N33/28

CPC分类号： C23C14/547 ,  C23C14/50 ,  C23C14/541 ,  C23C14/545 ,  E21B49/08 ,  G01N21/31 ,  G01N21/33 ,  G01N21/84 ,  G01N21/8422 ,  G01N33/2823 ,  G01N2021/8411 ,  G01N2021/8438

摘要： Technologies are described for controlling temperature of ICEs during ICE fabrication. In one aspect, a method includes receiving a design of an integrated computational element (ICE), the ICE design including specification of a substrate and a plurality of layers, their respective target thicknesses and complex refractive indices, where complex refractive indices of adjacent layers are different from each other, and where a notional ICE fabricated in accordance with the ICE design is related to a characteristic of a sample; forming at least some of the plurality of layers of an ICE in accordance with the ICE design; and controlling, during the forming, a temperature of the formed layers of the ICE such that the ICE, when completed, relates to the characteristic of the sample.

摘要翻译： 描述了在ICE制造期间控制ICE温度的技术。 一方面，一种方法包括接收集成计算元件（ICE）的设计，所述ICE设计包括基板和多个层的规格，它们各自的目标厚度和复折射率，其中相邻层的复折射率为 根据ICE设计制造的名义ICE与样品的特性有关; 根据ICE设计形成ICE的多个层中的至少一些层; 并且在形成期间控制ICE的成形层的温度，使得ICE在完成时与样品的特性相关。

公开(公告)号：US20160185605A1

公开(公告)日：2016-06-30

申请号：US15063614

申请日：2016-03-08

申请人： EMPIRE TECHNOLOGY DEVELOPMENT LLC

发明人： Thomas A. Yager ,  Joshua Robinson

IPC分类号： C01B31/04 ,  C23C16/26 ,  H01J37/34 ,  C23C14/14 ,  C23C14/54 ,  C23C14/34 ,  C23C16/52 ,  C23C14/02

CPC分类号： C23C14/545 ,  C01B32/186 ,  C23C14/022 ,  C23C14/14 ,  C23C14/34 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/52 ,  C23C16/545 ,  H01J37/3426 ,  H01J37/347 ,  H01J37/3476 ,  H01J2237/022 ,  H01J2237/081 ,  H01J2237/24578 ,  H01J2237/2487 ,  H01J2237/3323 ,  Y10T428/265 ,  Y10T428/30

摘要： Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate.

公开(公告)号：US20160130696A1

公开(公告)日：2016-05-12

申请号：US14432844

申请日：2014-05-08

申请人： Halliburton Energy Services, Inc.

发明人： James M. Price ,  Aditya B. Nayak ,  David L. Perkins

IPC分类号： C23C14/54 ,  G01B11/06 ,  G02B1/12 ,  G01N21/41 ,  C23C14/30 ,  G02B5/28

CPC分类号： C23C14/54 ,  C23C14/22 ,  C23C14/30 ,  C23C14/545 ,  C23C14/547 ,  G01B11/06 ,  G01N21/41 ,  G02B1/12 ,  G02B5/285

摘要： Systems and methods of controlling a deposition rate during thin-film fabrication are provided. A system as provided may include a chamber, a material source contained within the chamber, an electrical component to activate the material source, a substrate holder to support the multilayer stack and at least one witness sample. The system may further include a measurement device and a computational unit. The material source provides a layer of material to the multilayer stack and to the witness sample at a deposition rate controlled at least partially by the electrical component and based on a correction value obtained in real-time by the computational unit. In some embodiments, the correction value is based on a measured value provided by the measurement device and a computed value provided by the computational unit according to a model.

摘要翻译： 提供了在薄膜制造期间控制沉积速率的系统和方法。 所提供的系统可以包括腔室，容纳在腔室内的材料源，用于激活材料源的电气部件，用于支撑多层叠层的衬底保持器和至少一个见证样品。 该系统还可以包括测量装置和计算单元。 材料源以至少部分地由电气部件控制的沉积速率并且基于由计算单元实时获得的校正值，向多层叠层和见证样品提供一层材料。 在一些实施例中，校正值基于由测量装置提供的测量值和由计算单元根据模型提供的计算值。