公开(公告)号：US20220359208A1

公开(公告)日：2022-11-10

申请号：US17735830

申请日：2022-05-03

Applicant: Applied Materials, Inc.

Inventor： Sankuei LIN ,  Pradeep SUBRAHMANYAN

IPC: H01L21/285 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: Methods of forming a nanosheet field effect transistor (FET) device with reduced source/drain contact resistance are provided herein. In some embodiments, a method of forming an FET device includes: etching a nanosheet stack of the nanosheet FET device to form a plurality of first source/drain regions and a plurality of second source/drain regions, the nanosheet stack comprising alternating layers of nanosheet channel layers and sacrificial nanosheet layers; depositing a silicide layer in the plurality of first source/drain regions at ends of the nanosheet channel layers via a selective silicidation process to control a length of the nanosheet channel layers between the first source/drain regions; and performing a metal fill process to fill the plurality of first source/drain regions, wherein the metal fill extends from a lowermost nanosheet channel layer to above an uppermost nanosheet channel layer to facilitate the reduced source/drain contact resistance.