公开(公告)号：US20250112054A1

公开(公告)日：2025-04-03

申请号：US18894665

申请日：2024-09-24

Applicant: Applied Materials, Inc.

Inventor： Yuriy Shusterman ,  Sean Reidy ,  Sai Hooi Yeong ,  Lisa Megan McGill ,  Benjamin Colombeau ,  Andre P. Labonte ,  Veeraraghavan S. Basker ,  Balasubramanian Pranatharthiharan

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/26 ,  H01L21/311

Abstract: Exemplary methods of semiconductor processing may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A structure may be disposed within the processing region. The structure may include a first silicon-containing material. The structure may include a second silicon-containing material, an oxygen-containing material, or both. The methods may include contacting the structure with the etchant precursor. The contacting with the etchant precursor may etch at least a portion of the second silicon-containing material or the oxygen-containing material from the structure. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the structure with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the first silicon-containing material.