公开(公告)号：US10903055B2

公开(公告)日：2021-01-26

申请号：US14690121

申请日：2015-04-17

申请人： Applied Materials, Inc.

发明人： Rohit Mishra ,  Graeme Jamieson Scott ,  Khalid Mohiuddin Sirajuddin ,  Sheshraj L. Yulshibagwale ,  Sriskantharajah Thirunavukarasu

IPC分类号： H01J37/32 ,  H01L21/687

摘要： Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.