公开(公告)号：US11053590B2

公开(公告)日：2021-07-06

申请号：US16584707

申请日：2019-09-26

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Siva Suri Chandra Rao Bhesetti ,  Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Shoju Vayyapron ,  Cheng Sun

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

公开(公告)号：US10586696B2

公开(公告)日：2020-03-10

申请号：US15976519

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Yongjia Li ,  Mir Abdulla Al Galib ,  Minoru Takahashi ,  Masato Ito ,  Jinhan Choi

IPC: H01L21/02 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/1157 ,  H01L27/11524

Abstract: In an embodiment, a method of processing a substrate includes introducing a first process gas or a mixture of the first process gas and a second process gas into an etch chamber; exposing the substrate to the first process gas or to the mixture of the first and second process gases, the substrate having halogen residue formed on an exposed surface, the substrate having high aspect ratio features; forming and maintaining a plasma of the first process gas or a plasma of the mixture of the first and second process gases in the etch chamber to remove the residue from the surface by applying a first source power; exposing the substrate to the second process gas; and forming and maintaining a plasma of the second process gas in the etch chamber to remove the residue from the surface by applying a second source power and a bias power.

公开(公告)号：US10465288B2

公开(公告)日：2019-11-05

申请号：US14461318

申请日：2014-08-15

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Siva Suri Chandra Rao Bhesetti ,  Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Shoju Vayyapron ,  Cheng Sun

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

公开(公告)号：US10903055B2

公开(公告)日：2021-01-26

申请号：US14690121

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Graeme Jamieson Scott ,  Khalid Mohiuddin Sirajuddin ,  Sheshraj L. Yulshibagwale ,  Sriskantharajah Thirunavukarasu

IPC: H01J37/32 ,  H01L21/687

Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

公开(公告)号：US20200017972A1

公开(公告)日：2020-01-16

申请号：US16584707

申请日：2019-09-26

Applicant: Applied Materials, Inc.

Inventor： Rohit Mishra ,  Siva Suri Chandra Rao Bhesetti ,  Eng Sheng Peh ,  Sriskantharajah Thirunavukarasu ,  Shoju Vayyapron ,  Cheng Sun

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.