公开(公告)号：US20220262619A1

公开(公告)日：2022-08-18

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidl Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.