公开(公告)号：US10727059B2

公开(公告)日：2020-07-28

申请号：US16188514

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Rajesh Prasad ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal

IPC: H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.

公开(公告)号：US12094709B2

公开(公告)日：2024-09-17

申请号：US17390151

申请日：2021-07-30

Applicant: Applied Materials, Inc.

Inventor： Jung Chan Lee ,  Mun Kyu Park ,  Jun Lee ,  Euhngi Lee ,  Kyu-Ha Shim ,  Deven Matthew Raj Mittal ,  Sungho Jo ,  Timothy Miller ,  Jingmei Liang ,  Praket Prakash Jha ,  Sanjay G. Kamath

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02271

Abstract: Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

公开(公告)号：US20240035154A1

公开(公告)日：2024-02-01

申请号：US17874951

申请日：2022-07-27

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Meng Cai ,  Deven Matthew Raj Mittal ,  Vincent Deno

IPC: C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4405 ,  H01J37/32862

Abstract: A method of cleaning a plasma chamber is disclosed. Periodically, a cleaning process is performed. The cleaning process comprises introducing a mixture of fluoride molecules and argon into the plasma chamber and creating a plasma. The fluoride molecules are ionized and interact with the deposited material on the chamber walls. This causes the fluorine ions to bond to the deposited material, which typically results in a gas that can be exhausted from the plasma chamber. When the deposited material has been removed, the amount of free fluorine within the plasma chamber increases. This increase in fluorine may be used to determine when the plasma chamber is cleaned.

公开(公告)号：US12112949B2

公开(公告)日：2024-10-08

申请号：US17963059

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US20220262619A1

公开(公告)日：2022-08-18

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidl Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US20250037989A1

公开(公告)日：2025-01-30

申请号：US18907769

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US12142475B2

公开(公告)日：2024-11-12

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35 ,  H10B43/27

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US12014927B2

公开(公告)日：2024-06-18

申请号：US17963841

申请日：2022-10-11

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US11469107B2

公开(公告)日：2022-10-11

申请号：US16939316

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.