公开(公告)号：US20220130722A1

公开(公告)日：2022-04-28

申请号：US17505521

申请日：2021-10-19

Applicant: Applied Materials, Inc.

Inventor： Suketu Arun PARIKH ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Shuchi Sunil OJHA ,  Tom CHOI ,  Nitin K. INGLE ,  Sanjay NATARAJAN

IPC: H01L21/768

Abstract: A substrate processing method includes creating a mask on a top surface of a workpiece. A first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask. The method further includes exposing the workpiece to a plasma. The method further includes performing a first etching of the first portion of the gap fill material to create a first cavity while the second portion of the gap fill material remains in place, depositing a first metal-containing substance in the first cavity, performing a second etching of the second portion of the gap fill material to create a second cavity while the first metal-containing substance remains in place, and depositing a second metal-containing substance in the second cavity.