公开(公告)号：US20160293437A1

公开(公告)日：2016-10-06

申请号：US14968500

申请日：2015-12-14

Applicant: Applied Materials, Inc.

Inventor： Qingjun ZHOU ,  Jungmin KO ,  Tom CHOI ,  Sean KANG ,  Jeremiah PENDER ,  Srinivas D. NEMANI ,  Ying ZHANG

IPC: H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31105 ,  H01L21/32136 ,  H01L21/32137

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

Abstract translation: 本文描述的实施例涉及用于图案化衬底的方法。 诸如双重图案化和四重图案化工艺的图案化工艺可以受益于本文所述的实施例，其包括对间隔材料执行惰性等离子体处理，对间隔材料的处理区域进行蚀刻工艺，并重复惰性等离子体处理 和蚀刻工艺以形成期望的间隔物轮廓。 惰性等离子体处理工艺可以是偏压工艺，并且蚀刻工艺可以是无偏的工艺。 可以控制各种加工参数，例如工艺气体比和压力，以影响所需的间隔物轮廓。

公开(公告)号：US20170243754A1

公开(公告)日：2017-08-24

申请号：US15398011

申请日：2017-01-04

Applicant: Applied Materials, Inc.

Inventor： Aurelien TAVERNIER ,  Qingjun ZHOU ,  Tom CHOI ,  Yungchen LIN ,  Ying ZHANG ,  Olivier JOUBERT

IPC: H01L21/311 ,  H01L21/3105 ,  H01L21/8234 ,  H01L21/3115

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31155 ,  H01L21/823431

Abstract: Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment to implant ions into a spacer material, performing an etching process on an implanted region of the spacer material, and repeating the inert plasma treatment and the etching process to form a predominantly flat top spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as pressure, may be controlled to influence a desired spacer profile.

公开(公告)号：US20160293438A1

公开(公告)日：2016-10-06

申请号：US15080117

申请日：2016-03-24

Applicant: Applied Materials, Inc.

Inventor： Qingjun ZHOU ,  Jungmin KO ,  Tom CHOI ,  Sean KANG ,  Jeremiah PENDER ,  Srinivas D. NEMANI ,  Ying ZHANG

IPC: H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31105 ,  H01L21/32136 ,  H01L21/32137

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

公开(公告)号：US20220130722A1

公开(公告)日：2022-04-28

申请号：US17505521

申请日：2021-10-19

Applicant: Applied Materials, Inc.

Inventor： Suketu Arun PARIKH ,  Martin Jay SEAMONS ,  Jingmei LIANG ,  Shuchi Sunil OJHA ,  Tom CHOI ,  Nitin K. INGLE ,  Sanjay NATARAJAN

IPC: H01L21/768

Abstract: A substrate processing method includes creating a mask on a top surface of a workpiece. A first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask. The method further includes exposing the workpiece to a plasma. The method further includes performing a first etching of the first portion of the gap fill material to create a first cavity while the second portion of the gap fill material remains in place, depositing a first metal-containing substance in the first cavity, performing a second etching of the second portion of the gap fill material to create a second cavity while the first metal-containing substance remains in place, and depositing a second metal-containing substance in the second cavity.

公开(公告)号：US20160307772A1

公开(公告)日：2016-10-20

申请号：US14968509

申请日：2015-12-14

Applicant: Applied Materials, Inc.

Inventor： Tom CHOI ,  Qingjun ZHOU ,  Ying ZHANG

IPC: H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/31155 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/3215 ,  H01L21/32155

Abstract: Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment to implant ions into a spacer material, performing an etching process on an implanted region of the spacer material, and repeating the inert plasma treatment and the etching process to form a predominantly flat top spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as pressure, may be controlled to influence a desired spacer profile.

Abstract translation: 本文所述的实施例涉及用于蚀刻衬底的方法。 图案化处理，例如双重图案化和四重图案化处理，可以受益于本文所述的实施例，其包括进行惰性等离子体处理以将离子注入到间隔物材料中，对间隔物材料的注入区域进行蚀刻处理，并重复 惰性等离子体处理和蚀刻工艺以形成主要平坦的顶部间隔物轮廓。 惰性等离子体处理工艺可以是偏压工艺，并且蚀刻工艺可以是无偏的工艺。 可以控制诸如压力的各种处理参数以影响期望的间隔物轮廓。