公开(公告)号：US11437242B2

公开(公告)日：2022-09-06

申请号：US16201724

申请日：2018-11-27

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Kwang-Soo Kim ,  Thomas Choi ,  Nitin Ingle

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/67

Abstract: Exemplary methods of etching semiconductor substrates may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having an exposed region of a first silicon-containing material and an exposed region of a second silicon-containing material. The second silicon-containing material may be exposed within a recessed feature defined by the substrate. The methods may include flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the semiconductor processing chamber to generate plasma effluents of the fluorine-containing precursor and the silicon-containing precursor. The methods may include contacting the substrate with the plasma effluents. The methods may include removing at least a portion of the second silicon-containing material.