公开(公告)号：US11852853B2

公开(公告)日：2023-12-26

申请号：US17147338

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Morgan Evans ,  Maurice Emerson Peploski ,  Joseph C. Olson ,  Thomas James Soldi

IPC: G02B5/18 ,  H01J37/305

CPC classification number: G02B5/1857 ,  H01J37/3056

Abstract: A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕ1 between the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.