公开(公告)号：US11562885B2

公开(公告)日：2023-01-24

申请号：US17351842

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Thomas Stacy ,  Jay T. Scheuer ,  Eric D. Hermanson ,  Bon-Woong Koo ,  Tseh-Jen Hsieh

IPC: H01J37/05 ,  H01J37/301 ,  H01J37/317

Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

公开(公告)号：US20220037114A1

公开(公告)日：2022-02-03

申请号：US17351842

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Thomas Stacy ,  Jay T. Scheuer ,  Eric D. Hermanson ,  Bon-Woong Koo ,  Tseh-Jen Hsieh

IPC: H01J37/301 ,  H01J37/317 ,  H01J37/05

Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.