公开(公告)号：US20250006474A1

公开(公告)日：2025-01-02

申请号：US18216432

申请日：2023-06-29

Applicant: Applied Materials, Inc.

Inventor： Naomi YOSHIDA ,  Nobuyuki SASAKI ,  Yoichi SUZUKI ,  Tomoyuki TADA ,  Balasubramanian PRANATHARTHIHARAN

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  H01L21/768

Abstract: A cluster tool for forming an interconnection structure includes a pre-clean chamber, a selective chemical vapor deposition (CVD) chamber, a plasma-enhanced CVD (PECVD) chamber, one or more transfer chambers coupled to the pre-clean chamber, the selective CVD chamber, and the PECVD chamber, and configured to transfer the interconnection structure between the pre-clean chamber, the selective CVD chamber, and the PECVD chamber without breaking vacuum environment, and a controller configured to cause pre-cleaning of an exposed surface of a metal layer formed within a first dielectric layer of the interconnection structure in the pre-clean chamber, selective deposition of a cap layer on the pre-cleaned surface of the metal layer in the selective CVD chamber, and deposition of deposit a second dielectric layer on the cap layer and an exposed surface of the first dielectric layer in the PECVD chamber.