公开(公告)号：US20200335332A1

公开(公告)日：2020-10-22

申请号：US16811901

申请日：2020-03-06

Applicant: Applied Materials, Inc.

Inventor： Lizhong SUN ,  Xiaodong YANG ,  Mark COVINGTON ,  Vivek VINIT ,  Vishal AGRAWAL

IPC: H01L21/02 ,  H01L21/768

Abstract: The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.