METHODS OF FORMING A METAL CONTAINING MATERIAL

    公开(公告)号:US20200335332A1

    公开(公告)日:2020-10-22

    申请号:US16811901

    申请日:2020-03-06

    Abstract: The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.

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