公开(公告)号：US20030173215A1

公开(公告)日：2003-09-18

申请号：US10096168

申请日：2002-03-12

Applicant: Applied Materials, Inc.

Inventor： Wei Wang

IPC: C23C014/34

CPC classification number: H01J37/3423 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3405

Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.

Abstract translation: 一种溅射靶，其具有在两个侧壁之间具有喉部并且面向待溅射涂覆的基底的环形拱顶。 拱顶部分地被设置在侧壁之间的环形喉部中的板部封闭。 因此，等离子体密度在保险库内增加。 此外，可以选择两个侧壁之间的板中的环形间隙的位置，以增加由两个侧壁产生的溅射沉积的均匀性。 板可以由一个或多个附接到壁的环形环形成，或者单个板具有形成在其中的孔可以桥接喉部。 或者，靶可以形成为圆柱形空心阴极，其中板部分地封闭圆形喉部。 旋转的非对称屋顶磁控管可以与没有限制板的空心阴极组合。

公开(公告)号：US20040031677A1

公开(公告)日：2004-02-19

申请号：US10646405

申请日：2003-08-22

Applicant: Applied Materials, Inc.

Inventor： Wei Wang ,  James Van Gogh

IPC: C23C014/32

CPC classification number: H01L21/76843 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/34 ,  H01L21/2855

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract translation: 公开了一种用于执行金属氮化物的PVD的系统。 通过将氩气或其它中性气体单独地引入离子化的金属等离子体PVD室中的方式，通过在或接近于上述气体入口的上部气体入口增加氮气或晶片表面附近的其它活性气体的分压来提供改进的性能 目标，在单独存在氩气或其他中性气体的情况下启动等离子体，之后氮气或其它活性气体通过晶片表面处或附近的下部气体入口引入室中，以提高沉积速率并降低沉积的电阻率 金属层。 用于实施本发明的装置包括在靶表面附近的氩源和与衬底支撑件成一体的氮源，从而在衬底表面附近输送氮。

公开(公告)号：US20030209422A1

公开(公告)日：2003-11-13

申请号：US10143211

申请日：2002-05-09

Applicant: Applied Materials, Inc.

Inventor： Wei Wang ,  Praburam Gopalraja ,  Jianming Fu

IPC: C23C014/32

CPC classification number: C23C14/345 ,  C23C14/024 ,  C23C14/3492 ,  H01J37/3405

Abstract: A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target onto a substrate and, during a subsequent forming interval, high frequency power is applied to the target to remove material from at least a portion of the substrate. The sputtering working gas admitted to the chamber may be maintained at a first pressure during the deposition interval and the pressure of the sputtering working gas may be increased to a second pressure during the forming interval.

Abstract translation: 一种用于在基板上沉积膜的方法和装置，其包括沉积间隔，其中DC功率被施加到靶以形成第一等离子体，并且材料从靶溅射到衬底上，并且在随后的形成间隔期间，高频功率为 施加到靶材以从基材的至少一部分去除材料。 允许进入腔室的溅射工作气体可以在沉积间隔期间保持在第一压力，并且溅射工作气体的压力可以在成形间隔期间增加到第二压力。