公开(公告)号：US12000044B2

公开(公告)日：2024-06-04

申请号：US16448449

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli ,  Byunghoon Yoon ,  Wei Min Chen

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C23C16/06 ,  C23C16/45544

Abstract: Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.

公开(公告)号：US20190390340A1

公开(公告)日：2019-12-26

申请号：US16448449

申请日：2019-06-21

Applicant: Applied Materials, Inc

Inventor： Sang Ho Yu ,  Seshadri Ganguli ,  Byunghoon Yoon ,  Wei Min Chen

IPC: C23C16/455 ,  C23C16/06

Abstract: Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.