公开(公告)号：US12000044B2

公开(公告)日：2024-06-04

申请号：US16448449

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli ,  Byunghoon Yoon ,  Wei Min Chen

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C23C16/06 ,  C23C16/45544

Abstract: Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.

公开(公告)号：US11621266B2

公开(公告)日：2023-04-04

申请号：US17522448

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L21/67 ,  H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

公开(公告)号：US20210285102A1

公开(公告)日：2021-09-16

申请号：US17198576

申请日：2021-03-11

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/455 ,  C23C16/02 ,  C23C28/02

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20200350204A1

公开(公告)日：2020-11-05

申请号：US16866974

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Lu Chen ,  Seshadri Ganguli

IPC: H01L21/768

Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

公开(公告)号：US20200090991A1

公开(公告)日：2020-03-19

申请号：US16564451

申请日：2019-09-09

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Seshadri Ganguli

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Methods for forming barrier/seed layers for interconnect structures are provided. More specifically, methods of depositing a film on a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall with a dielectric surface and a bottom with a conductive surface. A manganese-ruthenium film is formed in the opening in the first surface of the substrate on the conductive surface.

公开(公告)号：US10395916B2

公开(公告)日：2019-08-27

申请号：US15699110

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US09748105B2

公开(公告)日：2017-08-29

申请号：US14337908

申请日：2014-07-22

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Sang Ho Yu

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/321 ,  C23C16/14 ,  C23C16/04 ,  H01L21/3213

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/14 ,  H01L21/32136 ,  H01L21/76877

Abstract: Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.

公开(公告)号：US20140106083A1

公开(公告)日：2014-04-17

申请号：US13968057

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： KAI WU ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC: C23C16/452

CPC classification number: C23C16/452 ,  C23C16/08 ,  C23C16/50

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract translation: 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US20220325410A1

公开(公告)日：2022-10-13

申请号：US17847351

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/455 ,  C23C28/02 ,  C23C16/02 ,  H01L21/02

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US11171141B2

公开(公告)日：2021-11-09

申请号：US16804226

申请日：2020-02-28

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.