公开(公告)号：US20250038000A1

公开(公告)日：2025-01-30

申请号：US18227286

申请日：2023-07-27

Applicant: Applied Materials, Inc.

Inventor： Qintao ZHANG ,  Ludovico MEGALINI ,  Wei ZOU ,  Hans-Joachim L. GOSSMANN ,  William O. CHARLES

IPC: H01L21/04 ,  H01L21/266 ,  H01L21/306 ,  H01L29/40

Abstract: Disclosed herein are methods for forming MOSFET trenches with improved corner properties. In some embodiments, a method may include providing a device structure including an epitaxial layer and a hard mask over the epitaxial layer, and forming a trench through the well and the epitaxial layer, wherein the trench is defined by a sidewall, a bottom, and a corner at an intersection of the sidewall and the bottom. The method may further include implanting the device structure by delivering ions into the corner and into the bottom of the trench, and etching the trench to increase rounding of the corner.