公开(公告)号：US20230296880A1

公开(公告)日：2023-09-21

申请号：US18123085

申请日：2023-03-17

Applicant: Applied Materials, Inc.

Inventor： Yongan XU ,  Jin XU ,  William WILKINSON ,  Ludovic GODET

IPC: G02B27/00

CPC classification number: G02B27/0012

Abstract: Methods of forming a resist model for angled gratings on optical devices. In one example, a method includes designing a model with a model area and a verification area with initial mask patterns having a first grating pattern with a first angle and a first critical dimension and fabricating test masks with the model area having a first model angle and a first model critical dimension and the verification area having a first verification angle and a first verification critical dimension. The method also includes patterning a substrate with the test masks, measuring the first model angle, the first model critical dimension, the first verification angle and the first verification critical dimension, and fabricating a new device mask if the first verification angle is within the threshold range of the first desired angle and the first verification critical dimension is within the threshold range of the first desired critical dimension.

公开(公告)号：US20230324805A1

公开(公告)日：2023-10-12

申请号：US18131737

申请日：2023-04-06

Applicant: Applied Materials, Inc.

Inventor： Yongan XU ,  William WILKINSON ,  Jing GUO

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/203 ,  G03F7/70475

Abstract: A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.