公开(公告)号：US20250140523A1

公开(公告)日：2025-05-01

申请号：US18498970

申请日：2023-10-31

Applicant: Applied Materials, Inc.

Inventor： Stanislav S. TODOROV ,  D. Jeffrey LISCHER ,  Wonjae LEE ,  Pradeep SUBRAHMANYAN

IPC: H01J37/317 ,  H01J37/304

Abstract: A method of stress management in a substrate. The method may include comprising providing a stress compensation layer on a main surface of the substrate; and performing a dynamic implant procedure in an ion implanter to implant a set of ions into the stress compensation layer. The dynamic implant procedure may include exposing the substrate to an ion beam under a first set of conditions, the first set of conditions comprising an ion energy, a beam scan rate and a substrate scan rate; and varying at least the ion energy while the substrate is exposed to the ion beam. As such, a stress state of the substrate may change as a function of location on the substrate as a result of the dynamic implant.

公开(公告)号：US20250140567A1

公开(公告)日：2025-05-01

申请号：US18498813

申请日：2023-10-31

Applicant: Applied Materials, Inc.

Inventor： Stanislav S. TODOROV ,  Wonjae LEE ,  Pradeep SUBRAHMANYAN ,  D. Jeffrey LISCHER

IPC: H01L21/3115 ,  H01J37/24 ,  H01J37/317

Abstract: A a method of stress management in a substrate. The method may include providing a stress compensation layer on a main surface of the substrate; and performing a chained implant procedure to implant a set of ions into the stress compensation layer. The chained implant procedure may include directing a first implant procedure to the substrate, the first implant procedure generating a first damage profile within the stress compensation layer; directing a second implant to the substrate, different from the first implant, wherein a composite damage profile is generated within the stress compensation layer after the second implant, the composite damage profile resulting in a higher stress response ratio than the first damage profile.