公开(公告)号：US20230017035A1

公开(公告)日：2023-01-19

申请号：US17844181

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Thai Cheng Chua ,  Christian W. Valencia ,  Joung Joo Lee ,  Xianmin Tang ,  Xiao Chen

IPC: C23C16/27 ,  C23C16/56 ,  C23C16/511 ,  C23C16/52

Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.