-
公开(公告)号:US20230017035A1
公开(公告)日:2023-01-19
申请号:US17844181
申请日:2022-06-20
Applicant: Applied Materials, Inc.
Inventor: Bencherki Mebarki , Thai Cheng Chua , Christian W. Valencia , Joung Joo Lee , Xianmin Tang , Xiao Chen
IPC: C23C16/27 , C23C16/56 , C23C16/511 , C23C16/52
Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.